smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter mjd47;mjd50 features load formed for surface mount application straight lead absolute maximum ratings ta = 25 unless otherwise noted parameter symbol rating unit collector-emitter voltage mjd47 350 v mjd50 500 v collector-emitter voltage mjd47 250 v mjd50 400 v emitter-base voltage v ebo 5v collector current (dc) i c 1a collector current (pulse) i cp 2a base current i b 0.6 a collector dissipation (tc=25 ) 15 w collector dissipation (ta=25 ) 1.56 w junction temperature t j 150 storage temperature t stg -65to150 p c v cbo v ceo electrical characteristics ta = 25 unless otherwise noted parameter symbol testconditons min typ max unit collector-emitter sustaining voltage * mjd47 250 v mjd50 400 v collector cut-off current mjd47 v ce = 150v, i b =0 0.2 ma mjd50 v ce = 300v, i b =0 0.2 ma collector cut-off current mjd47 v ce = 350, v eb =0 0.1 ma mjd50 v ce = 500, v eb =0 0.1 ma emitter cut-off current i ebo v be =5v,i c =0 1 ma v ce = 10v, i c = 0.3a 30 150 v ce = 10v, i c =1a 10 collector-emitter saturation voltage * v ce(sat) i c =1a,i b =0.2a 1 v base-emitter saturation voltage * v be(sat) v ce = 10a, i c =1a 1.5 v current gain bandwidth product f t v ce =10v, i c =0.2a 10 mhz *pulse test: pw 300s, duty cycle 2% i c = 30ma, i b =0 dc current gain * v ceo(sus) i ceo i ces h fe sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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